Advanced SiC Devices

Design of high performance SiC devices

Design of high performance SiC devices is research project during 4 years until the end of 2009 and is funded by the Knowledge Foundation and Intrinsic semiconductors AB.

KK-stiftelsens logotyp 2 engelsk

The project aims to improve the Optimization tool further and use it for design of SiC devices. Some devices that are targeted within this project is:

	SiC MESFETs for RF power applications
	SiC Schottky diodes and JFETs for switched mode power supplies

SiC MESFETs for RF power devices are superior in terms breakdown voltage compared with the silicon counterparts. The higher voltage capabilities gives higher impedances enabling much easier circuit matching. This will be even more important in the upcoming broadband communication systems.

Increasing the switching frequency in switched mode power supplies could reduce the system cost as inductors, capacitors, transformers and circuit board area can be reduced. Using SiC JFETs instead of Si MOSFETs could be the solution for the switching element to use in such applications. Additional improvements that need to be achieved is in the field of transformers and ferrite materials. Much research effort is put into this field and the performance is constantly improved.

Kent Bertilsson

Kent.Bertilsson@miun.se

Phone:	+4660 148915
Fax:	+4660 148456
Cellular:	+4670 6864443

_______________________

Visiting adress:

Kent Bertilsson
Mid-Sweden University
Åkroken-S 205
Holmgatan 10
Sundsvall

Mailing adress:

Kent Bertilsson
ITM
Mid-Sweden University
S-851 70 Sundsvall
Sweden